JPS6232628B2 - - Google Patents

Info

Publication number
JPS6232628B2
JPS6232628B2 JP56028231A JP2823181A JPS6232628B2 JP S6232628 B2 JPS6232628 B2 JP S6232628B2 JP 56028231 A JP56028231 A JP 56028231A JP 2823181 A JP2823181 A JP 2823181A JP S6232628 B2 JPS6232628 B2 JP S6232628B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
pattern
conductivity type
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56028231A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57143862A (en
Inventor
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56028231A priority Critical patent/JPS57143862A/ja
Publication of JPS57143862A publication Critical patent/JPS57143862A/ja
Publication of JPS6232628B2 publication Critical patent/JPS6232628B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56028231A 1981-02-27 1981-02-27 Manufacture of semiconductor integrated circuit Granted JPS57143862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56028231A JPS57143862A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56028231A JPS57143862A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57143862A JPS57143862A (en) 1982-09-06
JPS6232628B2 true JPS6232628B2 (en]) 1987-07-15

Family

ID=12242817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56028231A Granted JPS57143862A (en) 1981-02-27 1981-02-27 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57143862A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0213320U (en]) * 1988-07-08 1990-01-26

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0213320U (en]) * 1988-07-08 1990-01-26

Also Published As

Publication number Publication date
JPS57143862A (en) 1982-09-06

Similar Documents

Publication Publication Date Title
JP2503460B2 (ja) バイポ−ラトランジスタおよびその製造方法
JPS62588B2 (en])
JP2581652B2 (ja) バイポ−ラ・トランジスタ構造の製造方法
JPH06342802A (ja) 高性能半導体装置及びその製造方法
JPS6252963A (ja) バイポ−ラトランジスタの製造方法
US4404737A (en) Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching
JPH0241170B2 (en])
JPS6256670B2 (en])
JPS5936432B2 (ja) 半導体装置の製造方法
JPH0322438A (ja) バイポーラ型半導体集積回路装置の製造方法
JPS6232628B2 (en])
JP2663632B2 (ja) 半導体装置及びその製造方法
JPS629226B2 (en])
JPS6242396B2 (en])
JPS6242397B2 (en])
JPH0155585B2 (en])
JPS6242395B2 (en])
JP2888652B2 (ja) 半導体集積回路装置及びその製造方法
JP2604550B2 (ja) 半導体装置
JPS58142573A (ja) 半導体集積回路およびその製造方法
JPH0222544B2 (en])
JP2915002B2 (ja) バイポーラ型半導体集積回路装置及びその製造方法
JP3056766B2 (ja) 半導体装置の製造方法
JPH0136709B2 (en])
JPH0828368B2 (ja) 半導体装置の製造方法